Investigation of the oxygen-vacancy (A-center) defect complex profile in neutron irradiated high resistivity silicon junction particle detectors

Conference · Sat Feb 01 00:00:00 EST 1992

OSTI ID:5020627

Li, Zheng; Kraner, H W ^[1]; Verbitskaya, E; Eremin, V; Ivanov, A ^[2]; Rattaggi, M; Rancoita, P G ^[3]; Rubinelli, F A; Fonash, S J ^[4]

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1. Brookhaven National Lab., Upton, NY (United States)
2. AN SSSR, St. Petersburg (Russian Federation). Physico-Technical Inst.
3. Istituto Nazionale di Fisica Nucleare, Milan (Italy)
4. Pennsylvania State Univ., University Park, PA (United States). Center for Electronic Materials a

Distributions of the A-center (oxygen-vacancy) in neutron silicon detectors have been studied using Deep Level Transient Spectroscopy. A-centers have been found to be nearly uniformly distributed in the silicon water depth for medium resistivity (0.1 {minus} 0.2 k{Omega}-cm) silicon detectors. A positive filling pulse was needed to detect the A-centers in high resistivity (>4 k{Omega}-cm) silicon detectors, and this effect was found to be dependent on the oxidation temperature. A discussion of this effect is presented. 16 refs.

• Research Organization: Brookhaven National Lab., Upton, NY (United States)
• Sponsoring Organization: USDOE; USDOE, Washington, DC (United States)
• DOE Contract Number: AC02-76CH00016
• OSTI ID: 5020627
• Report Number(s): BNL-47550; CONF-920716-5; ON: DE92016952
• Resource Relation: Conference: Nuclear and space radiation effects conference, New Orleans, LA (United States), 13-17 Jul 1992
• Country of Publication: United States
• Language: English

Related Subjects

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
36 MATERIALS SCIENCE
SI SEMICONDUCTOR DETECTORS
DAMAGING NEUTRON FLUENCE
SILICON OXIDES
A CENTERS
SEMICONDUCTOR JUNCTIONS
SPECTROSCOPY
CHALCOGENIDES
COLOR CENTERS
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
JUNCTIONS
MEASURING INSTRUMENTS
NEUTRON FLUENCE
OXIDES
OXYGEN COMPOUNDS
POINT DEFECTS
RADIATION DETECTORS
SEMICONDUCTOR DETECTORS
SILICON COMPOUNDS
VACANCIES
440200* - Radiation Effects on Instrument Components
Instruments
or Electronic Systems
440104 - Radiation Instrumentation- High Energy Physics Instrumentation
360202 - Ceramics
Cermets
& Refractories- Structure & Phase Studies