Comparison of Techniques for Bonding VCSELs Directly to Ics
Journal Article
·
· Journal of European Optical Society
OSTI ID:5011
This paper reports the successful bonding of 8 x 8 and 4 x 4 VCSEL arrays to Si CMOS and GaAs MESFET integrated circuits and to GaAs substrates. Three different bonding techniques are demonstrated and their electrical, optical and mechanical characteristics are compared. All three techniques remove the substrate from the VCSEL wafer, leaving individual VCSELs bonded directly to locations within the integrated circuit.
- Research Organization:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Sandia National Lab. (SNL-CA), Livermore, CA (United States)
- Sponsoring Organization:
- US Department of Energy (US)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 5011
- Report Number(s):
- SAND99-0711J; TRN: AH200115%%7
- Journal Information:
- Journal of European Optical Society, Other Information: Submitted to Journal of European Optical Society; PBD: 26 Mar 1999
- Country of Publication:
- United States
- Language:
- English
Similar Records
VCSEL`s bonded directly to foundry fabricated GaAs smart pixel arrays
Thermal resistance of VCSEL's bonded to integrated circuits
The oxide defined VCSEL-based smart pixels for the optical database filter
Journal Article
·
Mon Dec 01 00:00:00 EST 1997
· IEEE Photonics Technology Letters
·
OSTI ID:5011
+4 more
Thermal resistance of VCSEL's bonded to integrated circuits
Journal Article
·
Wed Dec 01 00:00:00 EST 1999
· IEEE Photonics Technology Letters (Institute of Electrical and Electronics Engineers)
·
OSTI ID:5011
+1 more
The oxide defined VCSEL-based smart pixels for the optical database filter
Conference
·
Tue Apr 01 00:00:00 EST 1997
·
OSTI ID:5011
+5 more