Precision manufacturing using advanced optical interference lithography. Final report
Goal was to develop interference lithography (IL) as a reliable process for patterning large-area, deep-submicron scale field emission arrays for field emission display (FED) applications. We have developed a system based on IL which can easily produce an array of 0.2-0.5 micron emitters over large area (up to 400 sq. in. to date) with better than 5% height and spacing uniformity. Process development as a result of this LDRD project represents a significant advance over the current state of the art for FED manufacturing and is applicable to all types of FEDs, independent of the emitter material. Ability of IL to pattern such structures simultaneously and uniformly on a large format has application to other technology areas, such as dynamic random access memory (DRAM) production and magnetic media recording.
- Research Organization:
- Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- W-7405-ENG-48
- OSTI ID:
- 491960
- Report Number(s):
- UCRL-ID-127161; ON: DE97053126
- Resource Relation:
- Other Information: PBD: 3 Apr 1997
- Country of Publication:
- United States
- Language:
- English
Similar Records
Use of interference lithography to pattern arrays of submicron resist structures for field emission flat panel displays
Methods for fabricating arrays of holes using interference lithography