Preparation of GaAs photocathodes at low temperature
The preparation of an atomically clean surface is a necessary step in the formation of negative electron affinity (NEA) GaAs. Traditional methods to this end include cleaving, heat cleaning and epitaxial growth. Cleaving has the advantage of yielding a fresh surface after each cleave, but is limited to small areas and is not suitable for specialized structures. Heat cleaning is both simple and highly successful, so it is used as a preparation method in virtually all laboratories employing a NEA source on a regular basis. Due to its high cost and complexity, epitaxial growth of GaAs with subsequent in vacuo transfer is not a practical solution for most end users of GaAs as a NEA electron source. While simple, the heating cleaning process has a number of disadvantages. Here, a variety of cleaning techniques related to preparation of an atomically clean GaAs surface without heating to 600 C are discussed and evaluated.
- Research Organization:
- SLAC National Accelerator Lab., Menlo Park, CA (United States)
- Sponsoring Organization:
- USDOE Office of Energy Research, Washington, DC (United States)
- DOE Contract Number:
- AC03-76SF00515
- OSTI ID:
- 486190
- Report Number(s):
- SLAC-PUB-7345; CONF-960999-3; ON: DE97007686; TRN: 97:011330
- Resource Relation:
- Conference: Workshop on polarized electron sources and low-energy polarimeters, Amsterdam (Netherlands), 6-7 Sep 1996; Other Information: PBD: Oct 1996
- Country of Publication:
- United States
- Language:
- English
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