Theory of gain in group-III nitride lasers
Conference
·
OSTI ID:481912
- Sandia National Labs., Albuquerque, NM (United States)
- Philipps Univ., Marburg (Germany); and others
A microscopic theory of gain in a group-III nitride quantum well laser is presented. The approach, which treats carrier correlations at the level of quantum kinetic theory, gives a consistent account of plasma and excitonic effects in an inhomogeneously broadened system.
- Research Organization:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 481912
- Report Number(s):
- SAND-96-2667C; CONF-970302-8; ON: DE97007589; TRN: 97:003632
- Resource Relation:
- Conference: Spring meeting of the Materials Research Society, San Francisco, CA (United States), 31 Mar - 4 Apr 1997; Other Information: PBD: 1997
- Country of Publication:
- United States
- Language:
- English
Similar Records
Microscopic theory of gain for an InGaN/AlGaN quantum well laser
Microscopic theory of gain in a group-III nitride strained quantum well laser
Theory of laser gain in group-III nitrides
Journal Article
·
Sat Nov 01 00:00:00 EST 1997
· Applied Physics Letters
·
OSTI ID:481912
+2 more
Microscopic theory of gain in a group-III nitride strained quantum well laser
Conference
·
Mon Jul 01 00:00:00 EDT 1996
·
OSTI ID:481912
+3 more
Theory of laser gain in group-III nitrides
Journal Article
·
Mon Aug 07 00:00:00 EDT 1995
· Applied Physics Letters
·
OSTI ID:481912