Highly uniform and reproducible visible to near-infrared vertical-cavity surface-emitting lasers grown by MOVPE
- Sandia National Labs., Albuquerque, NM (United States). Center for Compound Semiconductors Technology
The authors present the growth and characterization of vertical-cavity surface emitting lasers (VCSELs) from visible to near-infrared wavelength grown by metalorganic vapor phase epitaxy. Discussions on the growth issue of VCSEL materials include the control on growth rate and composition using an in situ normal-incidence reflectometer, optimization of ultra-high material uniformity, and comprehensive p- and n-type doping study in AlGaAs by CCl{sub 4} and Si{sub 2}H{sub 6} over the entire Al composition range. They will also demonstrate the recent achievements of selectively-oxidized VCSELs which include the first room-temperature continuous-wave demonstration of all-AlGaAs 700-nm red VCSELs, high-performance n-side up 850-nm VCSELs, and low threshold current and low-threshold voltage 1.06 {micro}m VCSELs using InGaAs/GaAsP strain-compensated quantum wells.
- Research Organization:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 474940
- Report Number(s):
- SAND-97-0967C; CONF-970231-31; ON: DE97005383; TRN: AHC29711%%110
- Resource Relation:
- Conference: SPIE international symposium, San Jose, CA (United States), 8-14 Feb 1997; Other Information: PBD: [1997]
- Country of Publication:
- United States
- Language:
- English
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