Fabrication issues of oxide-confined VCSELs
Conference
·
OSTI ID:468451
To insert high-performance oxide-confined vertical-cavity surface- emitting lasers (VCSELs) into the manufacturing arena, we have examined the critical parameters that must be controlled to establish a repeatable and uniform wet thermal oxidation process for AlGaAs. These parameters include the AlAs mole fraction, sample temperature, carrier gas flow, and bubbler water temperature. Knowledge of these parameters has enable the compilation of oxidation rate data for AlGaAs which exhibits an Arrhenius rate dependence. The compositionally dependent activation energies for Al{sub x}Ga{sub 1-x}As layers of x=1.00, 0.98, and 0.92 are found to be 1.24, 1.75, and 1.88 eV, respectively. 7 figs, 1 tab, 14 refs.
- Research Organization:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 468451
- Report Number(s):
- SAND-97-0909C; CONF-970231-28; ON: DE97004649
- Resource Relation:
- Conference: SPIE international symposium, San Jose, CA (United States), 8-14 Feb 1997; Other Information: PBD: [1997]
- Country of Publication:
- United States
- Language:
- English
Similar Records
Room temperature continuous-wave operation of GaInNAs long wavelength VCSELs
Selective oxidation of buried AlGaAs for fabrication of vertical-cavity lasers
Microstructure and interfacial properties of laterally oxidized Al{sub x}Ga{sub 1{minus}x}As
Conference
·
Thu Jun 22 00:00:00 EDT 2000
·
OSTI ID:468451
+2 more
Selective oxidation of buried AlGaAs for fabrication of vertical-cavity lasers
Conference
·
Sat Jun 01 00:00:00 EDT 1996
·
OSTI ID:468451
+2 more
Microstructure and interfacial properties of laterally oxidized Al{sub x}Ga{sub 1{minus}x}As
Conference
·
Tue Dec 31 00:00:00 EST 1996
·
OSTI ID:468451