Composite fermions in 2 x 10{sup 6} cm{sup 2}/Vs mobility A1GaAs/GaAs heterostructures grown by MOCVD
- Sandia National Labs., Albuquerque, NM (United States)
- Utah Univ., Salt Lake City, UT (United States). Dept. of Physics
Recent growth by MOCVD (metalorganic chemical vapor deposition) of 2.0x10{sup 6} cm{sup 2}/Vs mobility heterostructures are reported. These mobilities, the highest reported to date, are attributed to use of tertiarybutylarsine as the arsenic precursor. Measurements in tilted magnetic fields of the fractional quantum Hall effect states near filling factor 3/2 are consistent with a spin-split composite fermion (CF) model proposed earlier. Extracted values of the product of the CF g-factor and CF effective mass agree with values previously obtained for MBE samples.
- Research Organization:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 467127
- Report Number(s):
- CONF-9609125-1; ON: DE97004472
- Resource Relation:
- Conference: 23. international symposium on compound semiconductors, St. Petersburg (Russian Federation), 23-27 Sep 1996; Other Information: PBD: [1996]
- Country of Publication:
- United States
- Language:
- English
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