Ion-implanted GaAs JFETs with f{sub t} {gt} 45 GHz for low-power electronics
Conference
·
OSTI ID:460770
- Sandia National Labs., Albuquerque, NM (United States)
GaAs Junction Field Effect Transistors (JFETs) are reported with gate lengths down to 0.3 micrometers. The structure is fully self-aligned and employs all ion implantation doping. p[sup +]-gate regions are formed with either Zn or Cd implants along with a P coimplantation to reduce diffusion. The source and rain implants are engineered with Si or SiF implants to minimize short channel effects. JFETs with 0.3 micrometer gate length are demonstrated with a sub-threshold slope of 110 mV/decade along with an intrinsic unity current gain cutoff frequency as high as 52 GHz.
- Research Organization:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE Office of Financial Management and Controller, Washington, DC (United States)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 460770
- Report Number(s):
- SAND-96-2493C; CONF-961127-1; ON: DE97000743
- Resource Relation:
- Conference: IEEE gallium arsenide integrated circuit symposium: IC in GaAs, InP, and other compound semiconductors, Orlando, FL (United States), 3-6 Nov 1996; Other Information: PBD: [1996]
- Country of Publication:
- United States
- Language:
- English
Similar Records
High-frequency operation of 0.3 {mu}m GaAs JFETs for low-power electronic
Ion implantation processing for high-speed GaAs JFETs
An all-implanted, self-aligned, GaAs JFET with a nonalloyed W/p[sup +]-GaAs ohmic gate contact
Conference
·
Sun Sep 01 00:00:00 EDT 1996
·
OSTI ID:460770
+2 more
Ion implantation processing for high-speed GaAs JFETs
Conference
·
Sat Jul 01 00:00:00 EDT 1995
·
OSTI ID:460770
+1 more
An all-implanted, self-aligned, GaAs JFET with a nonalloyed W/p[sup +]-GaAs ohmic gate contact
Journal Article
·
Fri Jul 01 00:00:00 EDT 1994
· IEEE Transactions on Electron Devices (Institute of Electrical and Electronics Engineers); (United States)
·
OSTI ID:460770
+8 more