Characteristics of CVD ternary refractory nitride diffusion barriers
- and others
A range of different ternary refractory nitride compositions have been deposited by CVD (chemical vapor deposition) for the systems TiSiN, WBN, and WSiN. The precursors used are readily available. The structure, electrical, and barrier properties of the films produced by CVD are similar to those observed for films with similar compositions deposited by PVD (physical vapor deposition). The step coverage of the CVD processes developed is good and in some cases, exceptional. A combination of desirable resistivity, step coverage, and barrier properties exists simultaneously over a reasonable range of compositions for each system. Initial attempts to integrate WSiN films into a standard 0.5 micrometer CMOS process flow in place of a sputtered Ti/TiN stack were successful.
- Research Organization:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 446188
- Report Number(s):
- SAND-96-2799C; CONF-9609274-2; ON: DE97001315
- Resource Relation:
- Conference: Materials Research Society meeting on advanced interconnect systems for ULSI Applications `96, Boston, MA (United States), 19 Sep - 3 Oct 1996; Other Information: PBD: [1996]
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
42 ENGINEERING NOT INCLUDED IN OTHER CATEGORIES
REFRACTORIES
ELECTRIC CONDUCTIVITY
THIN FILMS
CHEMICAL VAPOR DEPOSITION
PHYSICAL VAPOR DEPOSITION
DIFFUSION BARRIERS
FABRICATION
BORON NITRIDES
TUNGSTEN NITRIDES
SILICON NITRIDES
TITANIUM NITRIDES
CERAMICS
PROCESSING
CRYSTAL STRUCTURE
SEMICONDUCTOR DEVICES