Use of high index substrates to enable dislocation filtering in large mismatch systems

Technical Report · Wed Jan 01 00:00:00 EST 1997

DOI:https://doi.org/10.2172/439011· OSTI ID:439011

Reno, J L; Biefeld, R M; Kurtz, S R; Baucom, K C

We report results in three areas of research relevant to the fabrication of a wide range of optoelectronic devices: The development of a new x-ray diffraction technique that can be used to rapidly determine the optimal period of a strained layer superlattice to maximize the dislocation filtering; The optimal MBE growth parameters for the growth of CdTe on GaAs(211); The determination of the relative efficiency of dislocation filtering in the (211) and (100) orientations; and The surface quality of InSb grown by MOCVD on InSb substrates is affected by the misorientation of the substrate.

• Research Organization: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
• Sponsoring Organization: USDOE, Washington, DC (United States)
• DOE Contract Number: AC04-94AL85000
• OSTI ID: 439011
• Report Number(s): SAND-97-0023; ON: DE97002708
• Resource Relation: Other Information: PBD: Jan 1997
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
42 ENGINEERING NOT INCLUDED IN OTHER CATEGORIES
SUBSTRATES
ALIGNMENT
SUPERLATTICES
X-RAY DIFFRACTION
CADMIUM TELLURIDES
MOLECULAR BEAM EPITAXY
INDIUM ANTIMONIDES
CHEMICAL VAPOR DEPOSITION
SEMICONDUCTOR DETECTORS
FABRICATION
LAYERS
CRYSTAL LATTICES
LATTICE PARAMETERS
STACKING FAULTS
DISLOCATIONS
GALLIUM ARSENIDES
CRYSTAL STRUCTURE
ETCHING
ANNEALING