Quantum Well Width Dependence of Threshold Current Density in InGaN Lasers
Journal Article
·
· Applied Physics Letters
OSTI ID:4369
The quantum confined Stark effect was found to result in a strong quantum well width dependence of threshold current density in strained group-III nitride quantum well lasers. For an In{sub 0.2}Ga{sub 0.8}N/GaN structure with quantum well width in the neighborhood of 3.5nm, our analysis shows that the reduction in spontaneous emission loss by the electron-hole spatial separation outweighs the corresponding reduction in gain to produce a threshold current density minimum.
- Research Organization:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Sandia National Lab. (SNL-CA), Livermore, CA (United States)
- Sponsoring Organization:
- US Department of Energy (US)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 4369
- Report Number(s):
- SAND99-0613J; TRN: AH200114%%68
- Journal Information:
- Applied Physics Letters, Other Information: Submitted to Applied Physics Letters; PBD: 16 Mar 1999
- Country of Publication:
- United States
- Language:
- English
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