Joining of silicon carbide using interlayer with matching coefficient of thermal expansion
- Univ. of California, Berkeley, CA (United States). Dept. of Materials Science and Mineral Engineering
The primary objective of this study is to develop a technique for joining a commercially available Silicon Carbide that gives good room temperature strength and the potential for good high temperature strength. One secondary objective is that the joining technique be adaptable to SiC{sub f}/SiC composites and/or Nickel based superalloys, and another secondary objective is that the materials provide good neutron irradiation resistance and low activation for potential application inside nuclear fusion reactors. The joining techniques studied here are: (1) reaction bonding with Al-Si/Si/SiC/C; (2) reaction/infiltration with calcium aluminum silicate; (3) ion exchange mechanism to form calcium hexaluminate (a refractory cement); and (4) oxide frit brazing with cordierite.
- Research Organization:
- Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
- Sponsoring Organization:
- USDOE Office of Energy Research, Washington, DC (United States)
- DOE Contract Number:
- AC03-76SF00098
- OSTI ID:
- 432941
- Report Number(s):
- LBNL-39588; ON: DE97002693; TRN: 98:008302
- Resource Relation:
- Other Information: TH: Thesis (M.S.); PBD: Nov 1996
- Country of Publication:
- United States
- Language:
- English
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