Cell shunt resistance and photovoltaic module performance
- National Renewable Energy Lab., Golden, CO (United States)
Shunt resistance of cells in photovoltaic modules can affect module power output and could indicate flawed manufacturing processes and reliability problems. The authors describe a two-terminal diagnostic method to directly measure the shunt resistance of individual cells in a series-connected module non-intrusively, without deencapsulation. Peak power efficiency vs. light intensity was measured on a 12-cell, series-connected, single crystalline module having relatively high cell shunt resistances. The module was remeasured with 0.5-, 1-, and 2-ohm resistors attached across each cell to simulate shunt resistances of several emerging technologies. Peak power efficiencies decreased dramatically at lower light levels. Using the PSpice circuit simulator, the authors verified that cell shunt and series resistances can indeed be responsible for the observed peak power efficiency vs. intensity behavior. The authors discuss the effect of basic cell diode parameters, i.e., shunt resistance, series resistance, and recombination losses, on PV module performance as a function of light intensity.
- Research Organization:
- National Renewable Energy Lab. (NREL), Golden, CO (United States)
- DOE Contract Number:
- AC36-83CH10093
- OSTI ID:
- 416124
- Report Number(s):
- NREL/TP-410-21091; CONF-960513-; ON: DE96007880; TRN: 96:006561-0020
- Resource Relation:
- Conference: 25. photovoltaic solar energy conference, Washington, DC (United States), 13-17 May 1996; Other Information: PBD: May 1996; Related Information: Is Part Of NREL preprints for the photovoltaic specialists conference of IEEE twenty-five; Gwinner, D. [ed.]; PB: 172 p.
- Country of Publication:
- United States
- Language:
- English
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