Impurity/defect interactions during MeV Si{sup +} ion implantation annealing
- North Carolina State Univ., Raleigh, NC (United States); and others
Ion implantation of dopant atoms at MeV energies is currently being explored in several integrated circuit device manufacturing processes. MeV implantation offers immediate advantages such as vertical well modulation, latch-up protection, device structure isolation, and reduced temperature processing. Simultaneously, it presents an opportunity to achieve {open_quotes}proximity{close_quotes} gettering of impurities from the active device region by placing high impurity solubility and/or secondary defect gettering sites within microns of the surface. If the MeV implanted species is a dopant ion, all three gettering mechanisms, i.e, segregation, relaxation and injection, can be involved in the gettering process, complicating the analysis and optimization of the process. However, investigation of gettering using non-dopant Si{sup +} ion damage allows the relaxation component of the gettering process to be isolated and examined separately. In general, gettering is verified by a reduction in impurity concentration in the region of interest, usually the device region, and/or a build-up of concentration/precipitation in a non-device sink region. An alternate and more meaningful approach is to use simple devices as materials characterization probes via changes in the electrical activity of the gettering sites. Device space charge probes also allow the evolution of the defect sites upon contamination to be tracked. We report here results of the electrical, structural, and chemical characterization of MeV implanted Si{sup +} damage using Deep Level Transient Spectroscopy (DLTS), Transmission Electron Microscopy (TEM), and Secondary Ion Mass Spectroscopy (SIMS). The damage has been characterized both as a function of annealing from 600 to 1100{degrees}C for 1 hr, and after contamination with Fe followed by low temperature gettering annealing.
- Research Organization:
- National Renewable Energy Lab. (NREL), Golden, CO (United States)
- OSTI ID:
- 415145
- Report Number(s):
- NREL/SP-413-8250; CONF-9508143-Extd.Absts.; ON: DE95009278; TRN: 96:006512-0029
- Resource Relation:
- Conference: 5. workshop on the role of impurities and defects in silicon device processing, Copper Mountain, CO (United States), 13-16 Aug 1995; Other Information: PBD: Aug 1995; Related Information: Is Part Of Fifth workshop on the role of impurities and defects in silicon device processing. Extended abstracts; Sopori, B.L.; Luque, A.; Sopori, B.; Swanson, D.; Gee, J.; Kalejs, J.; Jastrzebski, L.; Tan, T.; PB: 160 p.
- Country of Publication:
- United States
- Language:
- English
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