Gettering of metal impurities in silicon
- Universitaet Goettingen (Germany)
Gettering means the removal of metallic impurities from the device-active area of the wafer by transport to a predesigned region-called gettering layer (GL). We introduce an interface at z = d{sub GL}, at which the effect of the gettering mechanism on the metal impurity distribution in the wafer is quantified, e.g. by specifying currents or by interfacial reactions of metal impurities, self interstitials etc. between GL and wafer. In response metal impurities will diffuse out of the wafer into the gettering layer. Following such a concept, in general three species of the metal impurity (M) are involved in gettering: M{sub p} {l_arrow} M{sub i} {l_arrow} M{sub GL}. M{sub p} denotes immobile species in the wafer, which are precipitated into suicides or segregated at extended defects or whose diffusivity is too small to contribute noticeably to transport during the gettering procedure - like many substitutional metal species.
- Research Organization:
- National Renewable Energy Lab. (NREL), Golden, CO (United States)
- OSTI ID:
- 415137
- Report Number(s):
- NREL/SP-413-8250; CONF-9508143-Extd.Absts.; ON: DE95009278; TRN: 96:006512-0021
- Resource Relation:
- Conference: 5. workshop on the role of impurities and defects in silicon device processing, Copper Mountain, CO (United States), 13-16 Aug 1995; Other Information: PBD: Aug 1995; Related Information: Is Part Of Fifth workshop on the role of impurities and defects in silicon device processing. Extended abstracts; Sopori, B.L.; Luque, A.; Sopori, B.; Swanson, D.; Gee, J.; Kalejs, J.; Jastrzebski, L.; Tan, T.; PB: 160 p.
- Country of Publication:
- United States
- Language:
- English
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