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Title: Fundamental aspects of metallic impurities and impurity interactions in silicon during device processing

Abstract

A review on the behavior of metallic impurities in silicon can be considerably simplified by a restriction on pure, dislocation-free, monocrystalline silicon. In this case interactions between different impurities and between impurities and grown-in lattice defects can be reduced. This restriction is observed in Chapter 1 for discussing the general behavior of metallic impurities in silicon.

Authors:
 [1]
  1. TEMIC, TELEFUNKEN, Heilbronn (Germany)
Publication Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
OSTI Identifier:
415119
Report Number(s):
NREL/SP-413-8250; CONF-9508143-Extd.Absts.
ON: DE95009278; TRN: 96:006512-0003
Resource Type:
Conference
Resource Relation:
Conference: 5. workshop on the role of impurities and defects in silicon device processing, Copper Mountain, CO (United States), 13-16 Aug 1995; Other Information: PBD: Aug 1995; Related Information: Is Part Of Fifth workshop on the role of impurities and defects in silicon device processing. Extended abstracts; Sopori, B.L.; Luque, A.; Sopori, B.; Swanson, D.; Gee, J.; Kalejs, J.; Jastrzebski, L.; Tan, T.; PB: 160 p.
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 14 SOLAR ENERGY; SILICON; CRYSTAL DEFECTS; PROCESSING; SILICON SOLAR CELLS; IMPURITIES; MONOCRYSTALS; SOLUBILITY; METALS

Citation Formats

Graff, K. Fundamental aspects of metallic impurities and impurity interactions in silicon during device processing. United States: N. p., 1995. Web.
Graff, K. Fundamental aspects of metallic impurities and impurity interactions in silicon during device processing. United States.
Graff, K. 1995. "Fundamental aspects of metallic impurities and impurity interactions in silicon during device processing". United States. https://www.osti.gov/servlets/purl/415119.
@article{osti_415119,
title = {Fundamental aspects of metallic impurities and impurity interactions in silicon during device processing},
author = {Graff, K},
abstractNote = {A review on the behavior of metallic impurities in silicon can be considerably simplified by a restriction on pure, dislocation-free, monocrystalline silicon. In this case interactions between different impurities and between impurities and grown-in lattice defects can be reduced. This restriction is observed in Chapter 1 for discussing the general behavior of metallic impurities in silicon.},
doi = {},
url = {https://www.osti.gov/biblio/415119}, journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Aug 01 00:00:00 EDT 1995},
month = {Tue Aug 01 00:00:00 EDT 1995}
}

Conference:
Other availability
Please see Document Availability for additional information on obtaining the full-text document. Library patrons may search WorldCat to identify libraries that hold this conference proceeding.

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