Gallium self-diffusion in gallium arsenide: A study using isotope heterostructures
- California Univ., Berkeley, CA (United States)
- Evans (Charles) and Associates, Redwood City, CA (United States)
- Max-Planck-Institut, Stuttgart (Germany)
Ga self-diffusion was studied with secondary-ion mass spectroscopy in {sup 69}GaAs/{sup 71}GaAs isotope heterostructures grown by molecular beam epitaxy on GaAs substrates. Results show that the Ga self- diffusion coefficient in intrinsic GaAs can be described accurately with D = (43{+-}25 cm{sup 2}s{sup -1})exp(-4.24{+-}0.06 eV/k{sub B}T) over 6 orders of magnitude between 800 and 1225 C under As-rich condition. Experimental results combined with theoretical calculations strongly suggest Ga vacancy being the dominant native defect controlling the diffusion. No significant doping effects were observed in samples where the substrates were doped with Te up to 4x10{sup 17}cm{sup -3} or Zn up to 1x10{sup 19}cm{sup -3}.
- Research Organization:
- Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
- Sponsoring Organization:
- USDOE Office of Energy Research, Washington, DC (United States); National Science Foundation, Washington, DC (United States)
- DOE Contract Number:
- AC03-76SF00098
- OSTI ID:
- 414607
- Report Number(s):
- LBL-38349; CONF-960781-6; ON: DE97001218; CNN: Grant DMR-94 17763
- Resource Relation:
- Conference: International conference on physics of semiconductors, Berlin (Germany), 21-26 Jul 1996; Other Information: PBD: Sep 1996
- Country of Publication:
- United States
- Language:
- English
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