Amorphization threshold in Si-implanted strained SiGe alloy layers
- Univ. of Western Ontario, London, Ontario (Canada). Dept. of Physics
- Oak Ridge National Lab., TN (United States). Solid State Div.
- National Research Council, Ottawa, Ontario (Canada). Inst. for Microstructural Science
The authors have examined the damage produced by Si-ion implantation into strained Si{sub 1{minus}x}Ge{sub x} epilayers. Damage accumulation in the implanted layers was monitored in situ by time-resolved reflectivity and measured by ion channeling techniques to determine the amorphization threshold in strained Si{sub 1{minus}x}Ge{sub x} (x = 0.16 and 0.29) over the temperature range 30--110 C. The results are compared with previously reported measurements on unstrained Si{sub 1{minus}x}Ge{sub x}, and with the simple model used to describe those results. They report here data which lend support to this model and which indicate that pre-existing strain does not enhance damage accumulation in the alloy layer.
- Research Organization:
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States); Ontario Centre for Materials Research, Kingston, ON (Canada)
- DOE Contract Number:
- AC05-84OR21400
- OSTI ID:
- 41378
- Report Number(s):
- CONF-941144-105; ON: DE95008901; TRN: AHC29512%%116
- Resource Relation:
- Conference: Fall meeting of the Materials Research Society (MRS), Boston, MA (United States), 28 Nov - 9 Dec 1994; Other Information: PBD: Dec 1994
- Country of Publication:
- United States
- Language:
- English
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