Chemical-vapor deposition of complex oxides: materials and process development
This is the final report of a six-month, Laboratory-Directed Research and Development (LDRD) project at the Los Alamos National Laboratory (LANL) part of the Advanced Materials Laboratory (AML). The demand for higher performance and lower cost in electronics is driving the need for advanced materials and consequent process integration. Ceramic thin-film technology is becoming more important in the manufacture of microelectronic devices, photovoltaics, optoelectronics, magneto-optics, sensors, microwave, and radio frequency communication devices, and high-Tc superconducting tapes. A flexible processing approach for potential large-scale manufacturing of novel electronic ceramic thin films is desirable. Current thin- film deposition technologies based on physical vapor-deposition techniques are limited in scale potential and have limited control of processing parameters. The lack of control over multiple process parameters inhibits the versatility and reproducibility of the physical vapor deposition processes applied to complex oxides. Chemical vapor deposition is emerging as a viable approach for large- scale manufacturing of electronic materials. Specifically, the ability to control more processing parameters with chemical vapor deposition than with other processing techniques provides the reliability and material property reproducibility required by manufacturing. This project sought to investigate the chemical vapor deposition of complex oxides.
- Research Organization:
- Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
- Sponsoring Organization:
- USDOE Assistant Secretary for Human Resources and Administration, Washington, DC (United States)
- DOE Contract Number:
- W-7405-ENG-36
- OSTI ID:
- 405750
- Report Number(s):
- LA-UR-96-3458; ON: DE97000535
- Resource Relation:
- Other Information: PBD: [1996]
- Country of Publication:
- United States
- Language:
- English
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