skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Sub-surface characterization and three dimensional profiling of semiconductors by magnetic resonance force microscopy

Abstract

This is the final report of a two-year, Laboratory-Directed Research and Development (LDRD) project at the Los Alamos National Laboratory (LANL). The project successfully developed a magnetic resonance force microscope (MRFM) instrument to mechanically detect magnetic resonance signals. This technique provides an intrinsically subsurface, chemical-species-specific probe of structure, constituent density and other properties of materials. As in conventional magnetic resonance imaging (MRI), an applied magnetic field gradient selects a well defined volume of the sample for study. However mechanical detection allows much greater sensitivity, and this in turn allows the reduction of the size of the minimum resolvable volume. This requires building an instrument designed to achieve nanometer-scale resolution at buried semiconductor interfaces. High-resolution, three-dimensional depth profiling of semiconductors is critical in the development and fabrication of semiconductor devices. Currently, there is no capability for direct, high-resolution observation and characterization of dopant density, and other critical features of semiconductors. The successful development of MRFM in conjunction with modifications to improve resolution will enable for the first time detailed structural and electronic studies in doped semiconductors and multilayered nanoelectronic devices, greatly accelerating the current pace of research and development.

Authors:
; ; ;
Publication Date:
Research Org.:
Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
Sponsoring Org.:
USDOE, Washington, DC (United States)
OSTI Identifier:
380356
Report Number(s):
LA-UR-96-3253
ON: DE97000288; TRN: 96:005717
DOE Contract Number:  
W-7405-ENG-36
Resource Type:
Technical Report
Resource Relation:
Other Information: PBD: [1996]
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; SILICON; MAGNETIC RESONANCE; MICROSCOPY; GALLIUM ARSENIDES; INTERFACES; SEMICONDUCTOR DEVICES; SENSITIVITY; RESOLUTION

Citation Formats

Hammel, P C, Moore, G, Roukes, M, and Zhang, Zhenyong. Sub-surface characterization and three dimensional profiling of semiconductors by magnetic resonance force microscopy. United States: N. p., 1996. Web. doi:10.2172/380356.
Hammel, P C, Moore, G, Roukes, M, & Zhang, Zhenyong. Sub-surface characterization and three dimensional profiling of semiconductors by magnetic resonance force microscopy. United States. https://doi.org/10.2172/380356
Hammel, P C, Moore, G, Roukes, M, and Zhang, Zhenyong. 1996. "Sub-surface characterization and three dimensional profiling of semiconductors by magnetic resonance force microscopy". United States. https://doi.org/10.2172/380356. https://www.osti.gov/servlets/purl/380356.
@article{osti_380356,
title = {Sub-surface characterization and three dimensional profiling of semiconductors by magnetic resonance force microscopy},
author = {Hammel, P C and Moore, G and Roukes, M and Zhang, Zhenyong},
abstractNote = {This is the final report of a two-year, Laboratory-Directed Research and Development (LDRD) project at the Los Alamos National Laboratory (LANL). The project successfully developed a magnetic resonance force microscope (MRFM) instrument to mechanically detect magnetic resonance signals. This technique provides an intrinsically subsurface, chemical-species-specific probe of structure, constituent density and other properties of materials. As in conventional magnetic resonance imaging (MRI), an applied magnetic field gradient selects a well defined volume of the sample for study. However mechanical detection allows much greater sensitivity, and this in turn allows the reduction of the size of the minimum resolvable volume. This requires building an instrument designed to achieve nanometer-scale resolution at buried semiconductor interfaces. High-resolution, three-dimensional depth profiling of semiconductors is critical in the development and fabrication of semiconductor devices. Currently, there is no capability for direct, high-resolution observation and characterization of dopant density, and other critical features of semiconductors. The successful development of MRFM in conjunction with modifications to improve resolution will enable for the first time detailed structural and electronic studies in doped semiconductors and multilayered nanoelectronic devices, greatly accelerating the current pace of research and development.},
doi = {10.2172/380356},
url = {https://www.osti.gov/biblio/380356}, journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Oct 01 00:00:00 EDT 1996},
month = {Tue Oct 01 00:00:00 EDT 1996}
}