Key issues in plasma source ion implantation
- Los Alamos National Laboratory, NM (United States)
- Hughes Research Laboratory, Malibu, CA (United States)
Plasma source ion implantation (PSII) is a scaleable, non-line-of-sight method for the surface modification of materials. In this paper, we consider three important issues that should be addressed before wide-scale commercialization of PSII: (1) implant conformality; (2) ion sources; and (3) secondary electron emission. To insure uniform implanted dose over complex shapes, the ion sheath thickness must be kept sufficiently small. This criterion places demands on ion sources and pulsed-power supplies. Another limitation to date is the availability of additional ion species beyond B, C, N, and 0. Possible solutions are the use of metal arc vaporization sources and plasma discharges in high-vapor-pressure organometallic precursors. Finally, secondary electron emission presents a potential efficiency and x-ray hazard issue since for many metallurgic applications, the emission coefficient can be as large as 20. Techniques to suppress secondary electron emission are discussed.
- Research Organization:
- Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- W-7405-ENG-36
- OSTI ID:
- 376406
- Report Number(s):
- LA-UR-96-1741; CONF-9605214-1; ON: DE96011297; TRN: 96:005402
- Resource Relation:
- Conference: Surface coatings and technology conference on ion beam surve technology, Tomsk (Russian Federation), May 1996; Other Information: PBD: 1996
- Country of Publication:
- United States
- Language:
- English
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