GaInAsSb materials for thermophotovoltaics
- Massachusetts Inst. of Tech., Lexington, MA (United States). Lincoln Lab.
Ga{sub 1{minus}x}In{sub x}As{sub 1{minus}y}Sb{sub y} (0.06 < x < 0.2, 0.05 < y < 0.18) epilayers were grown lattice-matched to GaSb substrates by organometallic vapor phase epitaxy (OMVPE) and molecular beam epitaxy (MBE). For lattice-matched alloys, mirror-like surface morphologies were obtained by both OMVPE and MBE. The 4K photoluminescence (PL) of all layers had a full-width at half-maximum (FWHM) of less than 10 meV for PL peak emission < 1.9 {micro}m. PL FWHM increased to 30 meV for peak emission {approximately}2.12 {micro}m for OMVPE-grown layers. Nominally undoped layers are p-type with typical 300 K hole concentration of {approximately}9 {times} 10{sup 15} cm{sup {minus}3} and hole mobility {approximately}450 to 580 cm{sup 2}/V-s for OMVPE-grown layers, p- and n-type doping is reported for layers grown with either technique. The ideality factor of diode structures is {approximately}2 for both techniques.
- Research Organization:
- Knolls Atomic Power Lab. (KAPL), Niskayuna, NY (United States)
- Sponsoring Organization:
- USDOE Assistant Secretary for Nuclear Energy, Washington, DC (United States)
- DOE Contract Number:
- AC12-76SN00052
- OSTI ID:
- 350930
- Report Number(s):
- KAPL-P-000238; K-96154; CONF-961202-; ON: DE99002674; TRN: AHC29921%%115
- Resource Relation:
- Conference: 1996 Fall meeting of the Materials Research Society (MRS), Boston, MA (United States), 2-6 Dec 1996; Other Information: PBD: Dec 1996
- Country of Publication:
- United States
- Language:
- English
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