ICP Etching of SiC

Conference · Thu Feb 04 00:00:00 EST 1999

OSTI ID:3355

Grow, J M; Lambers, E S; Ostling, M; Pearton, S J; Ren, F; Shul, R J; Wang, J J; Zetterling, C -M

A number of different plasma chemistries, including NF{sub 3}/O{sub 2}, SF{sub 6}/O{sub 2}, SF{sub 6}/Ar, ICl, IBr, Cl{sub 2}/Ar, BCl{sub 3}/Ar and CH{sub 4}/H{sub 2}/Ar, have been investigated for dry etching of 6H and 3C-SiC in a Inductively Coupled Plasma tool. Rates above 2,000 {angstrom} cm{sup {minus}1} are found with fluorine-based chemistries at high ion currents. Surprisingly, Cl{sub 2}-based etching does not provide high rates, even though the potential etch products (SiCi{sub 4} and CCl{sub 4}) are volatile. Photoresist masks have poor selectivity over SiC in F{sub 2}-based plasmas under normal conditions, and ITO or Ni are preferred.

• Research Organization: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Sandia National Lab. (SNL-CA), Livermore, CA (United States)
• Sponsoring Organization: US Department of Energy (US)
• DOE Contract Number: AC04-94AL85000
• OSTI ID: 3355
• Report Number(s): SAND97-2080C; TRN: AH200112%%308
• Resource Relation: Conference: MRS Fall 1997, Boston, MA (US), 12/01/1997; Other Information: PBD: 4 Feb 1999
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ETCHING
SILICON CARBIDES
MASKING
PLASMA