skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Large area silicon drift detectors for x-rays -- New results

Technical Report ·
DOI:https://doi.org/10.2172/334361· OSTI ID:334361
; ; ;  [1];  [2];  [3]; ;  [4]
  1. Photon Imaging, Inc., Northridge, CA (United States)
  2. Univ. of Hawaii, Honolulu, HI (United States). Dept. of Physics
  3. Jet Propulsion Lab., Pasadena, CA (United States)
  4. Stanford Univ., CA (United States)

Large area silicon drift detectors, consisting of 8 mm and 12 mm diameter hexagons, were fabricated on 0.35 mm thick high resistivity n-type silicon. An external FET and a low-noise charge sensitive preamplifier were used for testing the prototype detectors. The detector performance was measured in the range 75 to 25 C using Peltier cooling, and from 0.125 to 6 {micro}s amplifier shaping time. Measured energy resolutions were 159 eV FWHM and 263 eV FWHM for the 0.5 cm{sup 2} and 1 cm{sup 2} detectors, respectively (at 5.9 keV, {minus}75 C, 6 {micro}s shaping time). The uniformity of the detector response over the entire active area (measured using 560 nm light) was < 0.5%.

Research Organization:
Photon Imaging, Inc., Northridge, CA (United States)
Sponsoring Organization:
USDOE Office of Energy Research, Washington, DC (United States); National Insts. of Health, Bethesda, MD (United States); National Aeronautics and Space Administration, Washington, DC (United States); Department of Commerce, Washington, DC (United States)
DOE Contract Number:
FG03-97ER82450
OSTI ID:
334361
Report Number(s):
CONF-981155-1; ON: DE99002381; CNN: Grant 2 R44 RR10647; Grant 97-1-18-01-2468A; Grant 50-DKNB-8-90106; TRN: 99:005018
Resource Relation:
Conference: 1998 IEEE nuclear science symposium, Toronto (Canada), 9-12 Nov 1998; Other Information: PBD: [1998]
Country of Publication:
United States
Language:
English