Dynamics of Wet Oxidation of High-AL-Content III-V Materials
Oxidation of layers of high-Al-content III-V materials by water vapor has become the enabling process for high-efficiency vertical cavity surface emitting lasers (VCSELS) and has potential applications for reducing substrate current leakage in GaAs-on-insulator (GOI) MESFETS. Because of the established importance of wet oxidation in optoelectronic devices and its potential applications in electronic devices, it has become increasingly important to understand the mechanism of wet oxidation and how it might be expected to affect both the fabrication and subsequent operation of devices that have been made using this technique. The mechanism of wet oxidation and the consequence of this mechanism for heterostructure design and ultimate device operation are discussed here.
- Research Organization:
- Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 3306
- Report Number(s):
- SAND99-0230C; ON: DE00003306
- Resource Relation:
- Conference: 1998 Fall MRS Meeting; Boston, MA: 11/30-12/04/1998
- Country of Publication:
- United States
- Language:
- English
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