A Unitifed Computational Approach to Oxide Aging Processes
Conference
·
OSTI ID:3298
In this paper we describe a unified, hierarchical computational approach to aging and reliability problems caused by materials changes in the oxide layers of Si-based microelectronic devices. We apply this method to a particular low-dose-rate radiation effects problem
- Research Organization:
- Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 3298
- Report Number(s):
- SAND99-0223C; ON: DE00003298
- Resource Relation:
- Conference: Materials Research Society Symposium; Boston, MA; 11/29-12/05/1998
- Country of Publication:
- United States
- Language:
- English
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