Limiting phase separation in epitaxial GaInAsSb
- Massachusetts Inst. of Tech., Lexington, MA (United States). Lincoln Lab.
- Lockheed Martin Corp., Schenectady, NY (United States)
GaInAsSb alloys are of great interest for lattice-matched thermophotovoltaic (TPV) devices because of the high performance attainable at 2.2 {micro}m. Extension of the TPV device cutoff wavelength to beyond 2.2 {micro}m is especially desirable since the emissive power of the source is significant at these longer wavelengths. However, the GaInAsSb quaternary alloy system exhibits a miscibility gap in the wavelength range of interest, and no devices with cutoff wavelengths longer than 2.3 {micro}m have been demonstrated. This paper reports the successful growth of GaInAsSb alloys which exhibit room temperature photoluminescence (PL) at wavelengths as long as 2.5 {micro}m. TPV devices with cutoff wavelengths out to 2.5 {micro}m exhibit external quantum efficiencies of 57%. These values are comparable to those measured for 2.2 {micro}m devices.
- Research Organization:
- Knolls Atomic Power Lab. (KAPL), Niskayuna, NY (United States)
- Sponsoring Organization:
- USDOE Assistant Secretary for Nuclear Energy, Washington, DC (United States)
- DOE Contract Number:
- AC12-76SN00052
- OSTI ID:
- 314152
- Report Number(s):
- KAPL-P-000133; K-98189; CONF-981104-; ON: DE99001733; TRN: AHC29907%%69
- Resource Relation:
- Conference: Fall meeting of the Materials Research Society, Boston, MA (United States), 30 Nov - 4 Dec 1998; Other Information: PBD: Nov 1998
- Country of Publication:
- United States
- Language:
- English
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