Microstructural stability in LPE Ga{sub x}In{sub (1{minus}x)}As{sub y}Sb{sub (1{minus}y)}/GaSb heterostructures
- Rensselaer Polytechnic Inst., Troy, NY (United States). Dept. of Materials Science and Engineering
- Lockheed-Martin, Inc., Schenectady, NY (United States)
The morphological and structural characteristics associated with the growth of lattice matched In{sub x}Ga{sub (1{minus}x)}As{sub y}Sb{sub (1{minus}y)}/GaSb (100) heterostructures is presented. The experiments focused on studying the effect of growth on vicinal surfaces tilted from the exact (100) orientation as well as variations in epilayer chemistry. It was found that variations in these process parameters had very strong effects on both the nucleation characteristics of the epilayer and the atomistic scale homogeneity of the alloy. The <100> and <110> variants in compositional modulation/phase separation were detected, as well as the evolution of weak (110) ordering. These results are discussed in the context of other studies on phase stability in III-V epitaxial structures, especially in terms of surface reconstruction and kinetic effects near conditions of spinodal decomposition.
- Research Organization:
- Knolls Atomic Power Lab. (KAPL), Niskayuna, NY (United States)
- Sponsoring Organization:
- USDOE Assistant Secretary for Nuclear Energy, Washington, DC (United States)
- DOE Contract Number:
- AC12-76SN00052
- OSTI ID:
- 307977
- Report Number(s):
- KAPL-P-000097; K-98106; CONF-9806176-; ON: DE99001576; TRN: AHC29905%%155
- Resource Relation:
- Conference: 40. electronic materials conference, Charlottesville, VA (United States), 24 Jun 1998; Other Information: PBD: Jun 1998
- Country of Publication:
- United States
- Language:
- English
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