Pit initiation in AlO{sub x}/Al thin films
- Sandia National Labs., Albuquerque, NM (United States)
- Ohio State Univ., Columbus, OH (United States)
- Brookhaven National Labs., Upton, NY (United States)
The electrochemical responses of AlO{sub x}/Al thin films have been investigated as a function of film growth conditions which produce films with different grain orientation, size and morphology. Films with smooth, 150 nm diameter, randomly oriented grains show a higher pitting potential and lower passive current than those films with large grain-boundary grooving from a mixture of smooth micron-sized, (200)-oriented grains and 300--500 nm diameter, (220)-oriented grains. These results suggest that surface roughness from grain-boundary grooving affects the pitting resistance more strongly than does the grain boundary density.
- Research Organization:
- Brookhaven National Lab. (BNL), Upton, NY (United States); Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE Office of Energy Research, Washington, DC (United States)
- DOE Contract Number:
- AC02-98CH10886; AC04-94AL85000
- OSTI ID:
- 307973
- Report Number(s):
- BNL-66100; CONF-981108-; ON: DE99001516; BR: KC0201020; TRN: AHC29905%%151
- Resource Relation:
- Conference: 194. meeting of the Electrochemical Society, Boston, MA (United States), 1-6 Nov 1998; Other Information: PBD: [1998]
- Country of Publication:
- United States
- Language:
- English
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