Bulk crystal growth of antimonide based III-V compounds for thermophotovoltaics applications
- Rensselaer Polytechnic Inst., Troy, NY (United States)
In this paper, the bulk growth of crack-free GaInSb and single phase GaInAsSb alloys are presented. A new class of III-V quasi-binary [A{sub III}B{sub V}]{sub 12{minus}x}[C{sub III}D{sub V}]{sub x} semiconductor alloys has been synthesized and bulk crystals grown from the melt for the first time. The present investigation is focused on the quasi-binary alloy (GaSb){sub 1{minus}x}(InAs){sub x} (0 < x < 0.05) due to its importance for thermophotovoltaic applications. The structural properties of this melt-grown quasi-binary alloy are found to be significantly different from the conventional quaternary compound Ga{sub 1{minus}x}In{sub x}As{sub y}Sb{sub 1{minus}y} with composition x = y. Synthesis and growth procedures are discussed. For the growth of ternary alloys, it was demonstrated that forced convection or mixing in the melt during directional solidification of In{sub x}Ga{sub 1{minus}x}Sb (0 < x < 0.1) significantly reduces cracks in the crystals.
- Research Organization:
- Knolls Atomic Power Lab. (KAPL), Niskayuna, NY (United States)
- Sponsoring Organization:
- USDOE Assistant Secretary for Nuclear Energy, Washington, DC (United States)
- DOE Contract Number:
- AC12-76SN00052
- OSTI ID:
- 307869
- Report Number(s):
- KAPL-P-000116; K-98158; CONF-981055-; ON: DE99001631; TRN: AHC29905%%46
- Resource Relation:
- Conference: 4. National Renewable Energy Laboratory (NREL) conference on thermophotovoltaic generation of electricity, Denver, CO (United States), 11-14 Oct 1998; Other Information: PBD: Oct 1998
- Country of Publication:
- United States
- Language:
- English
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