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Title: InGaAs monolithic interconnected modules (MIM)

Technical Report ·
DOI:https://doi.org/10.2172/296641· OSTI ID:296641
; ; ;  [1]; ; ;  [2]; ;  [3]
  1. Essential Research, Inc., Cleveland, OH (United States)
  2. National Aeronautics and Space Administration, Cleveland, OH (United States). Lewis Research Center
  3. Westinghouse Electric Corp., West Mifflin, PA (United States)

A monolithic interconnected module (MIM) structure has been developed for thermophotovoltaic (TPV) applications. The MIM device consists of many individual InGaAs cells series-connected on a single semi-insulating (S.I.) InP substrate. An infrared (IR) back surface reflector (BSR), placed on the rear surface of the substrate, returns the unused portion of the TPV radiator output spectrum back to the emitter for recycling, thereby providing for high system efficiencies. Also, the use of a BSR obviates the need to use a separate filtering element. As a result, MIMs are exposed to the entire emitter output, thereby maximizing output power density. MIMs with an active area of 1 x 1-cm were comprised of 15 cells monolithically connected in series. Both lattice-matched and lattice-mismatched InGaAs/InP devices were produced, with bandgaps of 0.74 and 0.55 eV, respectively. The 0.74-eV modules demonstrated an open-circuit voltage (Voc) of 6.158 V and a fill factor of 74.2% at a short-circuit current (Jsc) of 842 mA/cm{sup 2}, under flashlamp testing. The 0.55-eV modules demonstrated a Voc of 4.849 V and a fill factor of 57.8% at a Jsc of 3.87 A/cm{sup 2}. IR reflectance measurements (i.e., {lambda} > 2 {micro}m) of these devices indicated a reflectivity of {ge} 83%. Latest electrical and optical performance results for the MIMs will be presented.

Research Organization:
Bettis Atomic Power Lab., West Mifflin, PA (United States)
Sponsoring Organization:
USDOE Assistant Secretary for Nuclear Energy, Washington, DC (United States)
DOE Contract Number:
AC11-93PN38195
OSTI ID:
296641
Report Number(s):
WAPD-T-3154; CONF-970953-; ON: DE99000450; TRN: AHC29903%%39
Resource Relation:
Conference: 26. IEEE photovoltaic specialists conference, Anaheim, CA (United States), 29 Sep - 3 Oct 1997; Other Information: PBD: [1997]
Country of Publication:
United States
Language:
English