Comprehensive research on stability and performance of a-Si:H and alloys. Phase I team annual technical report, 31, May 1994--30, May 1995

Technical Report · Thu Aug 01 00:00:00 EDT 1996

DOI:https://doi.org/10.2172/285506· OSTI ID:285506

Dalal, V ^[1]

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1. Iowa State Univ., Ames, IA (United States)

This report covers the research done during the first phase of the subcontract. During this period, we have concentrated on two areas: improving the voltage and stability of a-Si:H devices made using ECR deposition, and improving the properties of a-(Si,Ge):H films also using ECR deposition.

• Research Organization: National Renewable Energy Lab. (NREL), Golden, CO (United States)
• Sponsoring Organization: USDOE, Washington, DC (United States)
• DOE Contract Number: AC36-83CH10093
• OSTI ID: 285506
• Report Number(s): NREL/TP-451-21601; ON: DE96013078; TRN: 96:005066
• Resource Relation: Other Information: PBD: Aug 1996
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
36 MATERIALS SCIENCE
SILICON ALLOYS
ELECTRICAL PROPERTIES
GERMANIUM ALLOYS
HYDROGEN COMPOUNDS
PROGRESS REPORT
DOPED MATERIALS
SOLAR CELLS
DEPOSITION
THIN FILMS
ELECTRON CYCLOTRON-RESONANCE
SURFACE COATING
QUANTUM EFFICIENCY
PHOTOVOLTAICS
AMORPHOUS SILICON ALLOYS
ELECTRON CYCLOTRON RESONANCE
ECR DEPOSITION