Electronic states in Cd{sub 1{minus}x}Zn{sub x}Te/CdTe strained layer coupled double quantum wells and their photoluminescence

Technical Report · Sat Dec 31 00:00:00 EST 1994

DOI:https://doi.org/10.2172/28351· OSTI ID:28351

Li, T; Lozykowski, H J ^[1]; Reno, J ^[2]

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1. Ohio Univ., Athens, OH (United States). Dept. of Electrical and Computer Engineering
2. Sandia National Labs., Albuquerque, NM (United States)

Experimental and theoretical investigation of electronic states in a strained-layer CdTe/CdZnTe coupled double quantum well structure are presented. The optical properties of this lattice-mismatched heterostructure were characterized with photoluminescence (PL), PL excitation and polarization spectroscopies. Influence of electrical field on exciton states in the strained-layer CdTe/CdZnTe coupled double quantum well structure is experimentally studied. The confined electronic states were calculated in the framework of the envelope function approach, taking into account the strain effect induced by the lattice-mismatch. Experimental results are compared with the calculated transition energies.

• Research Organization: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
• Sponsoring Organization: USDOE, Washington, DC (United States)
• DOE Contract Number: AC04-94AL85000
• OSTI ID: 28351
• Report Number(s): SAND-95-0168C; CONF-941144-81; ON: DE95006806; TRN: AHC29510%%156
• Resource Relation: Conference: Fall meeting of the Materials Research Society (MRS), Boston, MA (United States), 28 Nov - 9 Dec 1994; Other Information: PBD: [1994]
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CADMIUM TELLURIDES
ELECTRONIC STRUCTURE
OPTICAL PROPERTIES
ZINC TELLURIDES
HETEROJUNCTIONS
EXPERIMENTAL DATA
BAND THEORY
THEORETICAL DATA
CRYSTAL LATTICES