Molecular dynamics simulation of low energy boron and arsenic implant into silicon
We have studied the implantation of boron and arsenic ions into silicon by classical molecular dynamics simulation. Single ion implant into the dimer reconstructed Si{l_brace}100{r_brace}(2x1) surface has been examined at energies between 0.25 keV and 5.0 keV, at both normal incidence and at non-channeling incidence. By using a new model for electronic stopping, developed for semiconductors and containing only one fitted parameter, we have been able to accurately calculate the depth profile of the implanted B and as atoms. The results of the calculations are compared to the predictions from a binary collision (BC) model for the dopant profile, and to experimental data. This allows us to examine the low energy limits on the validity of the BC approximation, with the aim of producing modifications to the BC model to extend its validity into the sub-keV regime.
- Research Organization:
- Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- W-7405-ENG-36
- OSTI ID:
- 273734
- Report Number(s):
- LA-UR-96-2211; CONF-9606110-3; ON: DE96012655
- Resource Relation:
- Conference: 11. international conference on ion implantation technology, Austin, TX (United States), 17-21 Jun 1996; Other Information: PBD: [1996]
- Country of Publication:
- United States
- Language:
- English
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