Passive SiC irradiation temperature monitor

Technical Report · Mon Apr 01 00:00:00 EST 1996

DOI:https://doi.org/10.2172/270471· OSTI ID:270471

Youngblood, G. E.

A new, improved passive irradiation temperature monitoring method was examined after an irradiation test at 627{degrees}C. The method is based on the analysis of thermal diffusivity changes during postirradiation annealing of polycrystalline SiC. Based on results from this test, several advantages for using this new method rather than a method based on length or lattice parameter changes are given.

• Research Organization: Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
• OSTI ID: 270471
• Report Number(s): DOE/ER-0313/19; ORNL/M-5023; ON: DE96010874; TRN: 96:016918
• Resource Relation: Other Information: PBD: Apr 1996; Related Information: Is Part Of Fusion materials semiannual progress report for the period ending December 31, 1995; PB: 336 p.
• Country of Publication: United States
• Language: English

Related Subjects

70 PLASMA PHYSICS AND FUSION
36 MATERIALS SCIENCE
44 INSTRUMENTATION
INCLUDING NUCLEAR AND PARTICLE DETECTORS
THERMONUCLEAR REACTOR MATERIALS
PHYSICAL RADIATION EFFECTS
SILICON CARBIDES
TEMPERATURE MONITORING
DAMAGING NEUTRON FLUENCE
THERMAL DIFFUSIVITY
PROGRESS REPORT
POINT DEFECTS
TEMPERATURE DEPENDENCE