Integrated decoupling capacitors using Pb(Zr,Ti)O{sub 3} thin films
Thin-film decoupling capacitors based on ferroelectric PLZT (PbLaZrTiO{sub 3}) films are being developed for advanced packaging. The increased integration that can be achieved by replacing surface- mount capacitors should lead to decreased package volume and improved high-speed performance. For this application, chemical solution deposition is an appropriate fabrication technique since it is a low- cost, high-throughput process. Relatively thick Pt electrodes (1{mu}m) are used to minimize series resistance and inductance in fabricating these devices. Also, important electrical properties are discussed, with emphasis on lifetime measurements, which suggest that resistance degradation will not be a severe limitation on device performance. Finally, some of the work being done to develop methods of integrating these thin-film capacitors with integrated circuits and multichip modules is presented.
- Research Organization:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 253365
- Report Number(s):
- SAND-96-1475C; CONF-960401-57; ON: DE96011700
- Resource Relation:
- Conference: Spring meeting of the Materials Research Society (MRS), San Francisco, CA (United States), 8-12 Apr 1996; Other Information: PBD: [1996]
- Country of Publication:
- United States
- Language:
- English
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