Microstructure of GaN Grown on (111) Si by MOCVD

Conference · Thu Dec 17 00:00:00 EST 1998

OSTI ID:2457

Fleming, J G; Follstaedt, D M; Han, J; Provencio, P

Gallium nitride was grown on (111) Si by MOCVD by depositing an AIN buffer at 108O"C and then GaN at 1060 {degrees}C. The 2.2pm layer cracked along {1-100} planes upon cooling to room temperature, but remained adherent. We were able to examine the microstructure of material between cracks with TEM. The character and arrangement of dislocation are much like those of GaN grown on Al{sub 2}O{sub 3}: -2/3 pure edge and - 1/3 mixed (edge + screw), arranged in boundaries around domains of GaN that are slightly disoriented with respect to neighboring material. The 30 nm AIN buffer is continuous, indicating that AIN wets the Si, in contrast to GaN on Al{sub 2}O{sub 3}.

• Research Organization: Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
• Sponsoring Organization: USDOE
• DOE Contract Number: AC04-94AL85000
• OSTI ID: 2457
• Report Number(s): SAND98-2074C; ON: DE00002457
• Resource Relation: Conference: Materials Research Society 1998 Fall Meeting; Boston, MA; 11/30-12/04/1998
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
Gallium Nitrides
Microstructure
Silicon
Aluminium Oxides
Sapphire
Crystal Growth
Crystal Growth Methods
Chemical Vapor Deposition
Experimental Data