Ion implantation in compound semiconductors for high-performance electronic devices

Technical Report · Wed May 01 00:00:00 EDT 1996

DOI:https://doi.org/10.2172/231550· OSTI ID:231550

Zolper, J C; Baca, A G; Sherwin, M E; Klem, J F

Advanced electronic devices based on compound semiconductors often make use of selective area ion implantation doping or isolation. The implantation processing becomes more complex as the device dimensions are reduced and more complex material systems are employed. The authors review several applications of ion implantation to high performance junction field effect transistors (JFETs) and heterostructure field effect transistors (HFETs) that are based on compound semiconductors, including: GaAs, AlGaAs, InGaP, and AlGaSb.

• Research Organization: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
• Sponsoring Organization: USDOE, Washington, DC (United States)
• DOE Contract Number: AC04-94AL85000
• OSTI ID: 231550
• Report Number(s): SAND-96-0802C; CONF-960502-6; ON: DE96008169; TRN: AHC29611%%104
• Resource Relation: Conference: 189. meeting of the Electrochemical Society (ECS), Los Angeles, CA (United States), 5-10 May 1996; Other Information: PBD: [1996]
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
42 ENGINEERING NOT INCLUDED IN OTHER CATEGORIES
FIELD EFFECT TRANSISTORS
ION IMPLANTATION
GALLIUM ARSENIDES
ALUMINIUM ARSENIDES
INDIUM PHOSPHIDES
GALLIUM PHOSPHIDES
GALLIUM ANTIMONIDES
ALUMINIUM COMPOUNDS
CRYSTAL DOPING
HETEROJUNCTIONS
EXPERIMENTAL DATA
ZINC
CADMIUM
PHOSPHORUS