Generation of Chloride Active Defects at the Aluminum Oxide Surface for the Study of Localized Corrosion Initiation

Conference · Mon Dec 07 00:00:00 EST 1998

OSTI ID:2186

Barbour, J C; Missert, N; Son, K -A; Wall, F D; Zavadil, K R

The generation of surface defects on electron cyclotron resonance (ECR) plasma derived aluminum oxide films has been studied. We find that Cl active O vacancies can be generated using electron and ion irradiation yielding surface concentrations of 3 xl 013 to 1X1014 sites"cm-2. These values correspond to surface defect concentrations of 3 to 10% when compared to ordered, crystalline u-alumina. The vacancies appear to be responsible for increased surface O concentrations when immersed in water. Anodic polarization of irradiated films yields a decrease in the stable pitting potential which correlates with electron dose.

• Research Organization: Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
• Sponsoring Organization: USDOE
• DOE Contract Number: AC04-94AL85000
• OSTI ID: 2186
• Report Number(s): SAND98-2738C; ON: DE00002186
• Resource Relation: Conference: 194th Meeting of the Electrochemical Society; Boston, MA; 11/02-06/1998
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
Aluminium Oxides
Corrosion
Defects