Multi-level interconnects for heterojunction bipolar transistor integrated circuit technologies
- Sandia National Labs., Albuquerque, NM (United States)
- Research Triangle Inst., Research Triangle Park, NC (United States)
Heterojunction bipolar transistors (HBTs) are mesa structures which present difficult planarization problems in integrated circuit fabrication. The authors report a multilevel metal interconnect technology using Benzocyclobutene (BCB) to implement high-speed, low-power photoreceivers based on InGaAs/InP HBTs. Processes for patterning and dry etching BCB to achieve smooth via holes with sloped sidewalls are presented. Excellent planarization of 1.9 {micro}m mesa topographies on InGaAs/InP device structures is demonstrated using scanning electron microscopy (SEM). Additionally, SEM cross sections of both the multi-level metal interconnect via holes and the base emitter via holes required in the HBT IC process are presented. All via holes exhibit sloped sidewalls with slopes of 0.4 {micro}m/{micro}m to 2 {micro}m/{micro}m which are needed to realize a robust interconnect process. Specific contact resistances of the interconnects are found to be less than 6 {times} 10{sup {minus}8} {Omega}cm{sup 2}. Integrated circuits utilizing InGaAs/InP HBTs are fabricated to demonstrate the applicability and compatibility of the multi-level interconnect technology with integrated circuit processing.
- Research Organization:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 212553
- Report Number(s):
- SAND-95-2218C; CONF-960457-3; ON: DE96008870; TRN: AHC29608%%98
- Resource Relation:
- Conference: ICMCTF `96: international conference on metallurgical coatings and thin films, San Diego, CA (United States), 22-26 Apr 1996; Other Information: PBD: [1995]
- Country of Publication:
- United States
- Language:
- English
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