Reactive sputter deposition of boron nitride
The preparation of fully dense, boron targets for use in planar magnetron sources has lead to the synthesis of Boron Nitride (BN) films by reactive rf sputtering. The deposition parameters of gas pressure, flow and composition are varied along with substrate temperature and applied bias. The films are characterized for composition using Auger electron spectroscopy, for chemical bonding using Raman spectroscopy and for crystalline structure using transmission electron microscopy. The deposition conditions are established which lead to the growth of crystalline BN phases. In particular, the growth of an adherent cubic BN coating requires 400--500 C substrate heating and an applied {minus}300 V dc bias.
- Research Organization:
- Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- W-7405-ENG-48
- OSTI ID:
- 212540
- Report Number(s):
- UCRL-JC-121985; CONF-951030-10; ON: DE96008753; TRN: 96:010562
- Resource Relation:
- Conference: 42. National Symposium of the American Vacuum Society (AVS), Minneapolis, MN (United States), 16-20 Oct 1995; Other Information: PBD: Oct 1995
- Country of Publication:
- United States
- Language:
- English
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