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Title: Inelastic X-ray scattering from 6H-SiC

Abstract

The authors have studied electronic excitations in 6H-SiC using inelastic x-ray scattering. Inelastic scattering spectra were measured at momentum transfers ranging from 0.47 {angstrom}{sup {minus}1} to 2.00 {angstrom}{sup {minus}1} along the c-axis in the hexagonal lattice, i.e. , along [00{center_dot}1], and from 0.67 {angstrom}{sup {minus}1} to 2.00 {angstrom}{sup {minus}1} along the a-axis, i.e., alone, [10{center_dot}0]. Comparison of the two sets of data reveals an orientation dependence of the spectra, except for a characteristic peak at 22--23 eV that occurs for both directions at low Q. This peak has also been observed in electron energy loss spectroscopy studies and is identified as a bulk plasmon. The orientation dependence of the other spectral features is indicative of band structure effects. These data were obtained using a Ge(444) analyzer in a near backscattering geometry.

Authors:
;  [1];  [2];  [3]
  1. Argonne National Lab., IL (United States). Advanced Photon Source
  2. Argonne National Lab., IL (United States). Material Science Div.
  3. Brookhaven National Lab., Upton, NY (United States). National Synchrotron Light Source
Publication Date:
Research Org.:
Argonne National Lab. (ANL), Argonne, IL (United States)
Sponsoring Org.:
USDOE, Washington, DC (United States)
OSTI Identifier:
201761
Report Number(s):
ANL/XFD/CP-86585; CONF-951007-15
ON: DE96005208; TRN: 96:008306
DOE Contract Number:  
W-31109-ENG-38
Resource Type:
Technical Report
Resource Relation:
Conference: 188. meeting of the Electrochemical Society, Chicago, IL (United States), 8-13 Oct 1995; Other Information: PBD: Jul 1995
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 66 PHYSICS; SILICON CARBIDES; ELECTRONIC STRUCTURE; X RADIATION; INELASTIC SCATTERING; SEMICONDUCTOR MATERIALS; DIAGNOSTIC TECHNIQUES; EXPERIMENTAL DATA; SYNCHROTRON RADIATION; COMPARATIVE EVALUATIONS

Citation Formats

Macrander, A T, Blasdell, B, Montano, P A, Univ. of Illinois, Chicago, IL, and Kao, C C. Inelastic X-ray scattering from 6H-SiC. United States: N. p., 1995. Web. doi:10.2172/201761.
Macrander, A T, Blasdell, B, Montano, P A, Univ. of Illinois, Chicago, IL, & Kao, C C. Inelastic X-ray scattering from 6H-SiC. United States. https://doi.org/10.2172/201761
Macrander, A T, Blasdell, B, Montano, P A, Univ. of Illinois, Chicago, IL, and Kao, C C. 1995. "Inelastic X-ray scattering from 6H-SiC". United States. https://doi.org/10.2172/201761. https://www.osti.gov/servlets/purl/201761.
@article{osti_201761,
title = {Inelastic X-ray scattering from 6H-SiC},
author = {Macrander, A T and Blasdell, B and Montano, P A and Univ. of Illinois, Chicago, IL and Kao, C C},
abstractNote = {The authors have studied electronic excitations in 6H-SiC using inelastic x-ray scattering. Inelastic scattering spectra were measured at momentum transfers ranging from 0.47 {angstrom}{sup {minus}1} to 2.00 {angstrom}{sup {minus}1} along the c-axis in the hexagonal lattice, i.e. , along [00{center_dot}1], and from 0.67 {angstrom}{sup {minus}1} to 2.00 {angstrom}{sup {minus}1} along the a-axis, i.e., alone, [10{center_dot}0]. Comparison of the two sets of data reveals an orientation dependence of the spectra, except for a characteristic peak at 22--23 eV that occurs for both directions at low Q. This peak has also been observed in electron energy loss spectroscopy studies and is identified as a bulk plasmon. The orientation dependence of the other spectral features is indicative of band structure effects. These data were obtained using a Ge(444) analyzer in a near backscattering geometry.},
doi = {10.2172/201761},
url = {https://www.osti.gov/biblio/201761}, journal = {},
number = ,
volume = ,
place = {United States},
year = {Sat Jul 01 00:00:00 EDT 1995},
month = {Sat Jul 01 00:00:00 EDT 1995}
}