Inelastic X-ray scattering from 6H-SiC
Abstract
The authors have studied electronic excitations in 6H-SiC using inelastic x-ray scattering. Inelastic scattering spectra were measured at momentum transfers ranging from 0.47 {angstrom}{sup {minus}1} to 2.00 {angstrom}{sup {minus}1} along the c-axis in the hexagonal lattice, i.e. , along [00{center_dot}1], and from 0.67 {angstrom}{sup {minus}1} to 2.00 {angstrom}{sup {minus}1} along the a-axis, i.e., alone, [10{center_dot}0]. Comparison of the two sets of data reveals an orientation dependence of the spectra, except for a characteristic peak at 22--23 eV that occurs for both directions at low Q. This peak has also been observed in electron energy loss spectroscopy studies and is identified as a bulk plasmon. The orientation dependence of the other spectral features is indicative of band structure effects. These data were obtained using a Ge(444) analyzer in a near backscattering geometry.
- Authors:
-
- Argonne National Lab., IL (United States). Advanced Photon Source
- Argonne National Lab., IL (United States). Material Science Div.
- Brookhaven National Lab., Upton, NY (United States). National Synchrotron Light Source
- Publication Date:
- Research Org.:
- Argonne National Lab. (ANL), Argonne, IL (United States)
- Sponsoring Org.:
- USDOE, Washington, DC (United States)
- OSTI Identifier:
- 201761
- Report Number(s):
- ANL/XFD/CP-86585; CONF-951007-15
ON: DE96005208; TRN: 96:008306
- DOE Contract Number:
- W-31109-ENG-38
- Resource Type:
- Technical Report
- Resource Relation:
- Conference: 188. meeting of the Electrochemical Society, Chicago, IL (United States), 8-13 Oct 1995; Other Information: PBD: Jul 1995
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; 66 PHYSICS; SILICON CARBIDES; ELECTRONIC STRUCTURE; X RADIATION; INELASTIC SCATTERING; SEMICONDUCTOR MATERIALS; DIAGNOSTIC TECHNIQUES; EXPERIMENTAL DATA; SYNCHROTRON RADIATION; COMPARATIVE EVALUATIONS
Citation Formats
Macrander, A T, Blasdell, B, Montano, P A, Univ. of Illinois, Chicago, IL, and Kao, C C. Inelastic X-ray scattering from 6H-SiC. United States: N. p., 1995.
Web. doi:10.2172/201761.
Macrander, A T, Blasdell, B, Montano, P A, Univ. of Illinois, Chicago, IL, & Kao, C C. Inelastic X-ray scattering from 6H-SiC. United States. https://doi.org/10.2172/201761
Macrander, A T, Blasdell, B, Montano, P A, Univ. of Illinois, Chicago, IL, and Kao, C C. 1995.
"Inelastic X-ray scattering from 6H-SiC". United States. https://doi.org/10.2172/201761. https://www.osti.gov/servlets/purl/201761.
@article{osti_201761,
title = {Inelastic X-ray scattering from 6H-SiC},
author = {Macrander, A T and Blasdell, B and Montano, P A and Univ. of Illinois, Chicago, IL and Kao, C C},
abstractNote = {The authors have studied electronic excitations in 6H-SiC using inelastic x-ray scattering. Inelastic scattering spectra were measured at momentum transfers ranging from 0.47 {angstrom}{sup {minus}1} to 2.00 {angstrom}{sup {minus}1} along the c-axis in the hexagonal lattice, i.e. , along [00{center_dot}1], and from 0.67 {angstrom}{sup {minus}1} to 2.00 {angstrom}{sup {minus}1} along the a-axis, i.e., alone, [10{center_dot}0]. Comparison of the two sets of data reveals an orientation dependence of the spectra, except for a characteristic peak at 22--23 eV that occurs for both directions at low Q. This peak has also been observed in electron energy loss spectroscopy studies and is identified as a bulk plasmon. The orientation dependence of the other spectral features is indicative of band structure effects. These data were obtained using a Ge(444) analyzer in a near backscattering geometry.},
doi = {10.2172/201761},
url = {https://www.osti.gov/biblio/201761},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Sat Jul 01 00:00:00 EDT 1995},
month = {Sat Jul 01 00:00:00 EDT 1995}
}