Redistribution of Implanted Dopants in GaN

Journal Article · Fri Nov 20 00:00:00 EST 1998 · Journal of Electronic Materials

OSTI ID:1957

Fu, M; Gao, X A; Han, J; Pearton, S J; Rieger, D J; Shul, R J; Singh, R K; Wilson, R G; Zavada, J M; Zolper, J C

Donor (S, Se and Te) and acceptor (Mg, Be and C) dopants have been implanted into GaN at doses of 3-5x1014 cm-2 and annealed at temperatures up to 1450 *C. No redistribution of any of the elements is detectable by Secondary Ion Mass Spectrometry, except for Be, which displays an apparent damage-assisted diffusion at 900 "C. At higher temperatures there is no further movement of the Be, suggesting that the point defect flux that assists motion at lower temperatures has been annealed. Effective diffusivities are <2X 1013 cm2.sec-1 at 1450 `C for each of the dopants in GaN.

• Research Organization: Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
• Sponsoring Organization: USDOE
• DOE Contract Number: AC04-94AL85000
• OSTI ID: 1957
• Report Number(s): SAND98-2591J; ON: DE00001957
• Journal Information: Journal of Electronic Materials, Journal Name: Journal of Electronic Materials
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
42 ENGINEERING NOT INCLUDED IN OTHER CATEGORIES
Gallium Nitrides
Semiconductor Materials
Doped Materials
Annealing