Role of C, O and H in III-V nitrides
- Univ. of Florida, Gainesville, FL (United States)
- Hughes Research Laboratories, Malibu, CA (United States)
- Sandia National Labs., Albuquerque, NM (United States)
- US Army Research Laboratory, RTP, NC (United States)
The light ion impurities C, 0 and H have been implanted or diffused into GaN and related compounds and their effect on the electrical properties of these materials measured by Hall, C-V and SIMS as a function of annealing temperatures from 300--11OO{degree}C. While C in as-grown GaN appears to create an acceptor under MOMBE conditions, implanted C shows no measurable activity. Similarly, implanted 0 does not show any shallow donor activity after annealing at {le}700{degree}C, but can create high resistivity regions (10{sup 6} {Omega}/{open_square}) in GaN, AlInN and InGaN for device isolation when annealed at 500--70O{degree}C. Finally, hydrogen is found to passivate shallow donor and acceptor states in GaN, InN. InAlN and InGaN, with dissociation of the neutral complexes at >450{degree}C. The liberated hydrogen does not leave the nitride films until much higher annealing temperatures (>800{degree}C). Typical reactivation energies are {approximately}2.0 eV for impurity-hydrogen complexes.
- Research Organization:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States); Department of Defense, Washington, DC (United States); National Science Foundation, Washington, DC (United States)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 192551
- Report Number(s):
- SAND-95-2700C; CONF-951155-8; ON: DE96003066; CNN: NSF Grant 94-21109; ONR/ARPA URI N00014-92-J-1895
- Resource Relation:
- Conference: Fall meeting of the Materials Research Society (MRS), Boston, MA (United States), 27 Nov - 1 Dec 1995; Other Information: PBD: [1995]
- Country of Publication:
- United States
- Language:
- English
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