skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: A comparison of nodular defect seed geometeries from different deposition techniques

Conference ·
OSTI ID:192499
; ;  [1];  [2]
  1. Lawrence Livermore National Lab., CA (United States)
  2. C.E.A.-Centre d`Etudes de Limeil-Valenton, Villeneuve Saint Georges (France)

A focused ion-beam milling instrument commonly utilized in the semiconductor industry for failure analysis and IC repair, is capable of cross-sectioning nodular defects. Utilizing the instrument`s scanning on beam, high-resolution imaging of the seeds that initiate nodular defect growth is possible. In an attempt to understand the origins of these seeds, HfO{sub 2}/SiO{sub 2} and Ta{sub 2}O{sub 5}/SiO{sub 2} coatings were prepared by a variety of coating vendors and different deposition processes including e-beam, magnetron sputtering, and ion beam sputtering. By studying the shape, depth, and composition of the seed, inferences of its origin can be drawn. The boundaries between the nodule and thin film provide insight into the mechanical stability of the nodule. Significant differences in the seed composition, geometry of nodular growth and mechanical stability of the defects for sputtered versus e-beam coatings are reported. Differences in seed shape were also observed from different coating vendors using e-beam deposition of HfO{sub 2}/SiO{sub 2} coatings.

Research Organization:
Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
Sponsoring Organization:
USDOE, Washington, DC (United States)
DOE Contract Number:
W-7405-ENG-48
OSTI ID:
192499
Report Number(s):
UCRL-JC-121628; CONF-9510106-3; ON: DE96005397; TRN: 96:008332
Resource Relation:
Conference: 27. annual symposium on optical materials for high power lasers, Boulder, CO (United States), 30 Oct - 1 Nov 1995; Other Information: PBD: 29 Dec 1995
Country of Publication:
United States
Language:
English