GaN: Defect and Device Issues

Journal Article · Mon Nov 09 00:00:00 EST 1998 · Applied Physics Review

OSTI ID:1653

Pearton, S J; Ren, F; Shul, R J; Zolper, J C

The role of extended and point defects, and key impurities such as C, O and H, on the electrical and optical properties of GaN is reviewed. Recent progress in the development of high reliability contacts, thermal processing, dry and wet etching techniques, implantation doping and isolation and gate insulator technology is detailed. Finally, the performance of GaN-based electronic and photonic devices such as field effect transistors, UV detectors, laser diodes and light-emitting diodes is covered, along with the influence of process-induced or grown-in defects and impurities on the device physics.

• Research Organization: Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
• Sponsoring Organization: USDOE
• DOE Contract Number: AC04-94AL85000
• OSTI ID: 1653
• Report Number(s): SAND98-2502J; ON: DE00001653
• Journal Information: Applied Physics Review, Journal Name: Applied Physics Review
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
Gallium Nitrides
Point Defects
Impurities