The Growth of InAsSb/InAs/InPSb/InAs Mid-Infrared Emitters by Metal-Organic Chemical Vapor Deposition
We report on the metal-organic chemical vapor deposition (MOCVD) of strained layer superlattices (SLSs) of InAsSb/InAs/InPSb/InAs as well as mid-infrared optically pumped lasers grown using a high speed rotating disk react,or (RDR). The devices contain AIAsSb cladding layers and strained, type I, InAsSb/InAs/InPSb/InAs strained layer superlattice (SLS) active regions. By changing the layer thickness and composition of the SLS, we have prepared structures with low temperature (<20K) photoluminescence wavelengths ranging from 3.4 to 4.8 pm. The optical properties of the InAsSb/InPSb superlattices revealed an anomalous low energy transition that can be assigned to an antimony-rich, interfacial layer in the superlattice. This low energy transition can be eliminated by introducing a 1.0 nm InAs layer between the InAsSb and InPSb layers in the superlattice. An InAsSb/InAs/lnPSbflnAs SLS laser was grown on an InAs substrate with AlAs{sub 0.16}Sb{sub 0.84} cladding layers. A lasing threshold and spectrally narrowed laser emission were seen from 80 through 250 K, the maximum temperature where lasing occurred. The temperature dependence of the SLS laser threshold is described by a characteristic temperature, T{sub 0} = 39 K, from 80 to 200 K.
- Research Organization:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Sandia National Lab. (SNL-CA), Livermore, CA (United States)
- Sponsoring Organization:
- US Department of Energy (US)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 15202
- Report Number(s):
- SAND99-1940C; TRN: US200221%%446
- Resource Relation:
- Conference: 1999 Fall MRS Meeting, Boston, MA (US), 11/29/1999--12/03/1999; Other Information: PBD: 8 Dec 1999
- Country of Publication:
- United States
- Language:
- English
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