Filamentation and Fundamental-Mode Operation in InGaN Quantum Well Lasers
Journal Article
·
· Applied Physics Letters
OSTI ID:15164
Filamentation, and consequently output beam quality in InGaN quantum-well lasers are found to be strong functions of quantum-well width because of the interplay of quantum-confined Stark effect and many-body interactions. For an In{sub 0.2}Ga{sub 0.8}N/GaN gain medium the antiguiding factor in a thick 4nm quantum well is considerably smaller than that for a narrow 2nm one. As a result, lasers with the thicker quantum well maintain fundamental-mode operation with wider stripe widths and at significantly higher excitation levels.
- Research Organization:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Sandia National Lab. (SNL-CA), Livermore, CA (United States)
- Sponsoring Organization:
- US Department of Energy (US)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 15164
- Report Number(s):
- SAND99-3109J; TRN: US200221%%258
- Journal Information:
- Applied Physics Letters, Other Information: Submitted to Applied Physics Letters; PBD: 8 Dec 1999
- Country of Publication:
- United States
- Language:
- English
Similar Records
Theoretical analysis of filamentation and fundamental-mode operation in InGaN quantum well lasers
Analysis of lateral mode behavior in broad-area InGaN quantum well lasers
Quantum Well Width Dependence of Threshold Current Density in InGaN Lasers
Journal Article
·
Mon Mar 27 00:00:00 EST 2000
· Applied Physics Letters
·
OSTI ID:15164
Analysis of lateral mode behavior in broad-area InGaN quantum well lasers
Journal Article
·
Thu Jun 01 00:00:00 EDT 2000
· Journal of Quantum Electronics
·
OSTI ID:15164
Quantum Well Width Dependence of Threshold Current Density in InGaN Lasers
Journal Article
·
Tue Mar 16 00:00:00 EST 1999
· Applied Physics Letters
·
OSTI ID:15164
+1 more