Multilayer thin film thermoelectrics produced by sputtering
In this work we explore the possibility of achieving bulk electrical properties in single layer sputter deposited films grown epitaxially on (111) oriented BaF{sub 2} substrates. There are a number of sputter deposition parameters that can be varied in order to optimize the film quality. It is important to understand the effect of varying the deposition temperature, Ar sputtering gas pressure, and the substrate bias. We will consider only Bi and Bi{sub 0.86}Sb{sub 0.14} films in this paper. These materials were chosen since they have the same simple structure, two different band gaps and do not change significantly either in physical or electrical properties with small amounts of cross contamination. We will also present our work on multilayer thermoelectrics made of Bi and Bi{sub 0.86}Sb{sub 0.14} layers. There has been considerable interest in this multilayer structure in the literature. Theoretical calculations of the band structure and interface states of these multilayer structures have been made by Mustafaev and Agassi et al. respectively [6,7]. Experimentally Yoshida et al. have examined similar multilayer structures grown by MBE as well as Bi/Sb multilayer samples in which report an anomalous thermoelectric power [8].
- Research Organization:
- Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- W-7405-ENG-48
- OSTI ID:
- 150954
- Report Number(s):
- UCRL-JC-120268; CONF-950668-1; ON: DE96002654
- Resource Relation:
- Conference: 14. international conference on thermoelectrics, St. Petersburg (Russian Federation), 27-29 Jun 1995; Other Information: PBD: 19 Jun 1995
- Country of Publication:
- United States
- Language:
- English
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